ild32/ ilq32 document number 83650 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179017 8 7 6 5 e c c e a c c a 1 2 3 4 e c c e e c c e a c c a a c c a 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 pb p b -free e3 optocoupler, photodarlington output, high gain (dual, quad channel) features ? isolation test voltage, 5300 v rms high isolation resistance, 10 11 ? typical low coupling capacitance standard plastic dip package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 description the ild32/ ilq32 are optically coupled isolators with a gallium arsenide infrared led and a silicon photo- darlington sensor. switching can be achieved while maintaining a high degree of isolation between driving and load circuits. these optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks ild32 ctr > 500 %, dip-8 ilq32 ctr > 500 %, dip-16 ILD32-X006 ctr > 500 %, dip-8 400 mil (option 6) ild32-x007 ctr > 500 %, smd-8 (option 7) ild32-x009 ctr > 500 %, smd-8 (option 9) ilq32-x007 ctr > 500 %, smd-8 (option 7) ilq32-x009 ctr > 500 %, smd-8 (option 9) parameter test condition symbol value unit peak reverse voltage v r 3.0 v forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25c 1.33 mw/c
www.vishay.com 2 document number 83650 rev. 1.5, 26-oct-04 ild32/ ilq32 vishay semiconductors output coupler 1) between emitter and detector refer to standard climate 23 c/50 %rh; din 50014 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 30 v collector (load) current i c 125 ma power dissipation p diss 150 mw derate linearly from 25c 2.0 mw/c parameter test condition part symbol value unit isolation test voltage 1) t = 1.0 sec. v iso 5300 v rms creepage 7mm clearance 7mm comparative tracking index per din iec 112/vde303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? total dissipation ild32 p tot 400 mw ilq32 p tot 500 mw derate linearly from 25 c ild32 5.33 mw/c ilq32 6.67 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.25 1.5 v reverse current v r = 3.0 v i r 0.1 100 pf capacitance v r = 0 v c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 100 a, i f = 0 bv ceo 30 v breakdown voltage emitter- collector i e = 100 abc eco 5.0 10 na collector-emitter leakage current v ce = 10 v, i f = 0 i ceo 1.0 100 na
ild32/ ilq32 document number 83650 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit collector emitter i c = 2.0 ma, i f = 8.0 ma v cesat 1.0 v capacitance (input-output) c io 0.5 pf parameter test condition symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 10 v ctr 500 % parameter test condition symbol min ty p. max unit turn-on time v cc = 10 v, i f = 5.0 ma, r l = 100 ? t on 15 s turn-off time v cc = 10 v, i f = 5.0 ma, r l = 100 ? t off 30 s figure 1. forward voltage vs. forward current iild32_01 if - forward current - ma 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 1.4 vf - forward voltage - v ta = C55c ta = 25c ta = 85c figure 2. normalized non-saturated and saturated ctr ce vs. led current iild32_02 .1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 vce =1v vce = 10 v if - led current - ma nctrce - normalized ctr vce = 10 v if=10ma ta = 25c normalized to:
www.vishay.com 4 document number 83650 rev. 1.5, 26-oct-04 ild32/ ilq32 vishay semiconductors figure 3. normalized non-saturated and saturated collector- emitter current vs. led current figure 4. low to high propagation delay vs. collector load resistance and led current figure 5. high to low propagation delay vs. collector load resistance and led current iild32_03 100 1 .1 .001 .01 .1 1 10 vce=1v vce=10v if - led current - ma nice - normalized ice ta = 25c if = 10 ma vce=10v normalized to: 10 iild32_04 0 5 10 15 20 0 20 40 60 80 t a = 25c, v cc =10v vth = 1.5 v 220 ? ? 470 ? i f - led current - ma 100 ? 1k ? t plh -low/high propagation delay - s iild32_05 0 5 10 15 20 0 5 10 15 20 100 ? 1k ? i f - led current - ma t a =25c v cc =10v vth = 1.5 v t phl -high/low propagation delay - s figure 6. switching timing figure 7. switching schematic iild32_06 i f t r v o t d t s t f t phl t plh v th =1.5 v iild32_07 v o r l v cc =10 v i f =5 ma f=10 khz, df=50%
ild32/ ilq32 document number 83650 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 910111213141516 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 iso method a
www.vishay.com 6 document number 83650 rev. 1.5, 26-oct-04 ild32/ ilq32 vishay semiconductors min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
ild32/ ilq32 document number 83650 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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